Abstract
Zinc sulphide (ZnS) thin films have been prepared by chemical bath deposition method. X-ray diffraction (XRD) is used to analyze the structure and crystallite size and scanning electron microscopy is used to study the particle size and morphology of ZnS thin film. Optical studies have been carried out using UV-Visible-NIR absorbance spectrum. The band gap value of the film is calculated and it is found to be 3.45 eV. The dielectric properties of ZnS thin films have been studied in the different frequency at different temperatures. Key words: Zinc sulphide (ZnS) thin films, X-ray diffraction (XRD), scanning electron microscopy (SEM), dielectric studies.
Highlights
Zinc Sulphide (ZnS) belongs to II-VI group compound with wide direct band gap value ranging from 3.4 to 3.70eV
We report the synthesis and characterization of Zinc sulphide (ZnS) thin films
The optical absorption spectrum of ZnS films has been recorded in the wavelength region 300 – 600 nm and it is shown in
Summary
Zinc Sulphide (ZnS) belongs to II-VI group compound with wide direct band gap value ranging from 3.4 to 3.70eV. Zinc Sulphide (ZnS) belongs to II-VI group compound with wide direct band gap value ranging from 3.4 to 3.70. ZnS has significant potential applications such as in antireflection coating for light emitting diode (Katayama et al, 1975) for heterojunction solar cells (Bloss et al, 1988) and other optoelectronic devices such as electro luminescence devices and photovoltaic cells which are used in the field of displays (Beard et al, 2002), blue light emitting diode (Coe et al., 2002) sensors and lasers (Klimov et al, 2000) etc. Effort has been made to control the size, morphology and crystallinity of ZnS thin film in a wide variety of applications (Mach and Mueller, 1991; Varitimos and Tustison, 1987). We report the synthesis and characterization of ZnS thin films. The ZnS thin films were characterized by X-ray diffraction, and scanning electron microscopy (SEM), for microstructure
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