Abstract
Zinc selenide (ZnSe), zinc sulphide (ZnS) and lead sulphide (PbS) thin films were prepared by chemical bath deposition (CBD) method. In this paper we report results on the photoconductivity behaviour of ZnSe, ZnS and PbS thin films. Photoconductivity measurements were carried out at room temperature by connecting it in series with a picoammeter (Keithley 480) and a dc power supply. Photoconductivity processes may be the most suitable technique for obtaining information about the states in the gap. The thin films showed a significance rise in photocurrent over dark current. The photoconductive studies reveal the positive photoconductive nature of the thin films. Photoconduction includes generation and recombination of carriers and their transport to the electrodes. Key words: Thin films, photoconductivity, ZnSe, ZnS, PbS.  
Highlights
Semiconducting thin film materials, which are based on sulfides and selenides, have recently concerned much consideration as materials for optoelectronics technology
We report the photoconductivity studies were carried out on Zinc Selenide (ZnSe), Zinc sulphide (ZnS) and Lead Sulphide (PbS) thin films
The chemical bath deposition (CBD) method is used to the deposition of a thin film on a substrate from a reaction occurrence in solution
Summary
Semiconducting thin film materials, which are based on sulfides and selenides, have recently concerned much consideration as materials for optoelectronics technology. Thin films have other useful properties of electrical conduction, optical transmittance, reflectivity, absorption and corrosion resistance. Nanocrystalline semiconducting materials were used in electronic, optoelectronic and solar energy conversion devices. Semiconductor materials are extremely vital in the development of wide range electronic and optoelectronic devices for information applications. One of the key parameters that often determine the range of applications of a given semiconductor is the basic energy bandgap that separates the conduction from the valence bands, which is typically in the range from 0 to 3 eV for semiconductors (Yacobi, 2003). The electronic industries due to the use of thin films in electronic, opto-electronic and other devices have become the supreme beneficiary of thin film technology
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