Abstract

Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface. The discoveries of these states have sparked the hope of realizing non-trivial excitations and novel effects such as a magnetoelectric effect and topological Majorana excitations. Here we develop a theoretical formalism to show that a three-dimensional topological insulator can be designed artificially via stacking bilayers of two-dimensional Fermi gases with opposite Rashba-type spin-orbit coupling on adjacent layers, and with interlayer quantum tunneling. We demonstrate that in the stack of bilayers grown along a (001)-direction, a non-trivial topological phase transition occurs above a critical number of Rashba bilayers. In the topological phase, we find the formation of a single spin-polarized Dirac cone at the -point. This approach offers an accessible way to design artificial topological insulators in a set up that takes full advantage of the atomic layer deposition approach. This design principle is tunable and also allows us to bypass limitations imposed by bulk crystal geometry.

Highlights

  • Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface

  • The unusual properties of topological insulators (TI) rely on synthesizing suitable materials that inherit various invariant symmetries and spin-orbit coupling in the bulk ground state, and that allow the formation of metallic Dirac fermions at the boundary[1,2,3,4,5,6]

  • Such an inverted band dispersion is well established in first-principle band structure calculations[26], and angle-resolved photoemission spectroscopy (ARPES) measurements[14]

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Summary

Introduction

Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface. We find the formation of a single spin-polarized Dirac cone at the G-point This approach offers an accessible way to design artificial topological insulators in a set up that takes full advantage of the atomic layer deposition approach. We propose here an alternative approach to design TIs by combining a set of layers of two-dimensional Fermi gases (2DFGs) with Rashba-type spin-orbit coupling. This twodimensional spin-orbit locked metallic state, in the presence of interlayer quantum tunneling, translates into a bulk insulator with Z2-invariant topological properties and Dirac excitations on the surface. Such TI will be free from any particular crystal geometry studied earlier.[25]

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