Abstract
AbstractThin film β ‐FeSi2/Si heterojunction solar cells were engineered through magnetron‐sputtering of FeSi2 and Al onto n ‐Si(001) substrates and annealing by rapid thermal processing. Al was incorporated through co‐sputtering with β ‐FeSi2 and also as an interlayer between the co‐sputtered film and Si substrate. The resulting FeSi2(Al) was polycrystalline, orthorhombic and semiconducting. Under AM1.5G, 100 mW/cm2 illumination, devices prepared with Al interlayers exhibited short‐circuit current and open‐circuit voltage improvement over devices without interlayers. These devices were found to exhibit improved interface quality and reduced dark current. Spectral response measurements revealed photocarriers contribution from β ‐FeSi2(Al) film and Si which increased with Al concentration. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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