Abstract
By performing the Density functional theory based first principle calculations, we investigate the effect of z-axial (compressive and tensile) strain on the electronic band structure and transport coefficients of Janus MoSSe monolayer. The unstrained Janus MoSSe monolayer is a direct band gap semiconductor having an energy gap of 1.63 eV. The electronic band structure is very sensitive to the application of z-axial strain. Because of which the electronic transport coefficients get modulated. We found out that z-axial tensile strain enhances the power factor of n-type Janus MoSSe monolayer, however no enhancement is predicted for p-type Janus MoSSe monolayer
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