Abstract
Abstract
Highlights
The nitrogen-vacancy (NV) center is a point defect in diamond formed by a lattice vacancy paired with a nitrogen atom, which replaces the carbon atom adjacent to the vacancy.[1]
In this Letter, we report that the statistics of the decay rates of NV centers can be efficiently controlled by changing the immediate dielectric environment of NDs
As studied in our experiments, namely (i) an ND sitting on an SbTe film and (ii) an ND embedded in an SbTe film
Summary
The nitrogen-vacancy (NV) center is a point defect in diamond formed by a lattice vacancy paired with a nitrogen atom, which replaces the carbon atom adjacent to the vacancy.[1]. The average brightness of NV0 centers appears to decrease, by about five times, for NDs embedded in the SbTe film, following the decrease of their average lifetime as revealed by figure 2(b).
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
