Abstract
Separation by IMplantation of OXygen (SIMOX) 3-D sculpting is considered as a new method for 3-D strain engineering in buried silicon waveguides. A model capable of analyzing the stress distribution and strain gradient of buried silicon waveguides is developed. The modeled stress shows agreement with experimental measurements obtained using Raman spectroscopy. Our method not only provides a new way to engineer strain in silicon but allows for the integration of strained-silicon-based devices with other optical and/or electronic devices on the same substrate as well, improving the device density and enhancing the functionality of the optical chip.
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