Engineering Schottky barrier in vertical graphene/InN heterostructure

Abstract

In recent years, van der Waals stacked heterostructures (vdWHs) have gained much study interest for enhancing nanoelectronics’ performance. We take the first-principles methods to study the interface contact characters of the graphene/InN vdWH under the interlayer coupling and electric field. The natural electronic characters of both the graphene and InN components keep intact at the equilibrium interlayer distance with an n-type Schottky contact. Impressively, it tunes to Ohmic contact when the interlayer distance increases to 4.73 Å or the applying negative electric field increases to −0.42 V/Å, while it converts to p-type Schottky contact under a positive electric field greater than 0.2 V/Å. These findings are of great significance for the application of graphene/InN vdWH in high-performance nanoelectronics.