Abstract

A resonant enhancement of the radiative recombination rate of nonequilibrium carriers in InAs self-organized quantum dots coupled to the tilted cavity waveguide mode, as compared to the non-resonant emission, is observed using time-resolved photoluminescence (PL) spectroscopy. The effect manifests itself by the resonant reduction of the radiative recombination lifetime at the wavelength of the maximum optical confinement factor and the minimum leakage loss of the tilted wave in the planar multilayer waveguide structure, as recorded for the PL from the facet. We believe that this observation may be important for the engineering of highly-efficient light-emitting devices with a defined wavelength and far field in both stimulated and spontaneous emission mode using all-epitaxial design.

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