Abstract
The relationship between chemical structure (N/Si ratio) or physical structure (bilayer or laminate structure) of Si-rich nitride charge-trapping layer for metal–oxide–nitride–oxide–semiconductor (MONOS) type NAND flash memory and its electrical characteristics (including program/erase Vth window, fresh cell data retention and data retention after program/erase cycling stress) are investigated in detail. A bilayer charge-trapping structure formed by two different composite Si-rich nitride films has been developed that can realize a sufficient program/erase window and excellent data retention characteristics for multi-level cell (MLC) operation.
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