Abstract
Cu2O is an interesting semiconductor with extraordinary high exciton binding energy, however exhibiting weak room temperature excitonic luminescence. The issue was addressed in literature emphasizing a detrimental role of native point defects responsible for optical quenching. Resolving the problem, we propose a method to manipulate the Cu and O vacancies contents opening a gateway for optoelectronic applications of Cu2O. Specifically, applying oxygen lean conditions, we observe a remarkable suppression of VCu enabling strong room temperature exciton luminescence, while manipulating with VO reveals no impact on the signal. As a result, the excitonic signature was interpreted in terms of phonon assisted transitions.
Highlights
Cuprous oxide (Cu2O) was extensively used during early-stage explorations in experimental semiconductor physics, while recently the interest to Cu2O was reignited on behalf of possibilities to apply it in a number of key enabling technologies, including thin film transistors [1], resistive random access memories [2], photovoltaics [3], water splitting [4], spintronics [5], etc
Cu2O is an interesting semiconductor with extraordinary high exciton binding energy, exhibiting weak room temperature excitonic luminescence
Applying oxygen lean conditions, we observe a remarkable suppression of VCu enabling strong room temperature exciton luminescence, while manipulating with VO reveals no impact on the signal
Summary
Cuprous oxide (Cu2O) was extensively used during early-stage explorations in experimental semiconductor physics, while recently the interest to Cu2O was reignited on behalf of possibilities to apply it in a number of key enabling technologies, including thin film transistors [1], resistive random access memories [2], photovoltaics [3], water splitting [4], spintronics [5], etc.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have