Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Abstract

Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in–plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in–plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials.