Abstract

We report on the performance of hexagonal silicon (hSi)-based electrocatalysts with lattice substitution using a single Ge (Ge/hSi) and a single Ti (Ti/hSi) in promoting the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) via the water splitting process. All data provided in this work is generated using density functional theory (DFT)- based total energy calculations. Based on the results, we conclude that both Ge/hSi and Ti/hSi surfaces have the potential to be developed as HER and OER electrocatalysts. The Ti/hSi electrocatalyst outperforms Ge/hSi in terms of performance in decomposing H2O molecules and promoting OER due to its twice lower overpotential than the OER overpotential on the Ge/hSi surface. However, in comparison to H bonding to the Ti/hSi surface, Ge/hSi is somewhat weaker at binding H∗, making Ge/hSi slightly easier to induce HER compared to Ti/hSi. These findings will have a considerable impact on the development of new non-Pt group metal (non-PGM) catalysts.

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