Abstract
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.
Highlights
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3
The resistance change in ferroelectric tunnel junctions (FTJs) is interpreted as the result of a modification of the tunnel barrier profile or width upon polarization reversal of the ferroelectric barrier.[11,12,4,5,13,14,7,15]
This overall complexity could be partially reduced by involving ordinary metals as electrodes in FTJs: this would facilitate the interpretation of tunnel electroresistance (TER) to simple schemes where electrostatic modulation of the potential profile of the barrier is expected
Summary
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Barthélémy1 1Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France 2Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau, France (Received 13 May 2015; accepted 9 June 2015; published online 16 June 2015)
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