Abstract
When compared to the over-simplifled classical skin-efiect model, the accurate classical relaxation-efiect modelling approach for THz structures at room temperature can be mathematically cumbersome and not insightful. This paper introduces various interrelated electrical engineering concepts as tools for characterizing the intrinsic frequency dispersive nature of normal metals at room temperature. This engineering approach dramatically simplifles the otherwise complex analysis and allows for a much deeper insight to be gained into the classical relaxation-efiect model. For example, it explains how wavelength can increase proportionally with frequency at higher terahertz frequencies. This is the flrst time that such an approach has been developed for the modelling of intrinsic frequency dispersion within a metal. While the focus has been on the characterization of normal metals (magnetic and non-magnetic) at room temperature, it is believed that the same methodology may be applied to metals operating in anomalous frequency-temperature regions, superconductors, semiconductors, carbon nanotubes and metamaterials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
