Abstract
We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet (UV) InGaN/AlGaN multiple quantum wells (MQWs). We showed that the absorption of MQWs benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved good agreement between the experimental data of and the Monte Carlo (CASINO) simulations on the dependence of acceleration voltage and QW number on InGaN/AlGaN MQW structures. These findings indicate that CL-based UV generation from carefully engineered III-N MQW structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200–280 nm) wavelengths.
Highlights
Ultraviolet (UV) AlGaN-based light-emitting diodes (LEDs) are emerging as a potential substitute to conventional toxic mercury light sources
It is a common notion that the luminescence properties deteriorate by increasing the number of QWs in the multiple quantum wells (MQWs) region, Hospodková et al.4,5 reported that 30 QW structures have higher efficiency than the ten QW InGaN/GaN MQW structures
The power efficiency (PE) can be improved by increasing the QW number from 8 to 10, but further increasing the QW number will result in efficiency deterioration
Summary
Ultraviolet (UV) AlGaN-based light-emitting diodes (LEDs) are emerging as a potential substitute to conventional toxic mercury light sources. Depending on their emission wavelength, AlGaN devices can be used in a variety of applications, including industrial curing, currency detection, photocatalysis, disinfection, and sterilization.. It is a common notion that the luminescence properties deteriorate by increasing the number of QWs in the MQW region, Hospodková et al. reported that 30 QW structures have higher efficiency than the ten QW InGaN/GaN MQW structures. Oto et al. reported e-beam pumped AlGaN/AlN MQWs with a record 100 mW power DUV light source with a PE of ∼40%, whereas most of the other researchers reported
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