Abstract
Tandem solar cells are one of the most promising ways to exceeding the one-sun efficiency limit of single-junction (SJ) solar cells. However, compared to SJ solar cells, tandem solar cells often experience larger energy yield losses in the field, due to variations in operating conditions (i.e. spectrum, irradiance and operating temperature). We determine the energy yield losses of dual-junction and SJ GaAs solar cells, which are potential candidates for thin-film on silicon tandem solar cells. Our measurements show that a GaAs SJ cell has an annual energy yield of 3.0% more than with standard testing conditions (STC), whereas the investigated GaAs/GaAs dual-junction cell has an annual energy yield loss of 11.2% compared with STC.
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