Abstract

ABSTRACT In the paper energy s1aies of structured isoelecironic impuriiies of iransiiion meials and rare earth elemenis,the donor and acceptor excitons (DE,AE) of 3d and c(f impurities, ihe role of DE, AE of 3d and 4f impuriiiesin an energy transfer from the matrix to an impurities are discussed. It is shown that structured impuritiesmay be classified as and isoelectronic impurities. The number of electrons in the 3d or 4fshells is changed at hw < Eg for the open impurities and is not changed for closed impurities. The structureof energy levels generated by 3d and 4f impurities in a forbidden gap, the properties of DE and AE of theseimpurities and energy transfer mechanisms from the matrix to an impurity (capture of carriers into 3d orshells for open impurities and Auger process for closed impurities) are essentially distinguished for two kinds ofstructured isoelectronic impurities. For the closed 2mpurities a model is discussed in which frame the spectra of

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