Abstract

Anthracene dispersed in Polyphenylsiloxane (PPS) glass was synthesized on epitaxially grown zinc oxide (ZnO) to realize organic/inorganic hybrid semiconductors for efficient energy transfer. The photoluminescence (PL) from ZnO was modified by the presence of anthracene molecules due to resonant energy transfer. The UV-visible emission from anthracene molecule was also influenced due to resonant coupling with the excitonic and defect bound excitonic states in ZnO. Temperature dependence of PL of the hybrid system showed quenching of the defect bound emission of the ZnO to be due to energy transfer from anthracene. The PL lifetime in ZnO-anthracene/PPS hybrid structure at 4 K is relatively shorter and becomes comparable to the PL lifetimes in ZnO at 77 K. However, at room temperatures the PL lifetime of the hybrid structure is significantly longer than in ZnO and is comparable to the recombination lifetime in anthracene.

Highlights

  • Inorganic/organic hybrid materials have the potential of paving the way for developing new photonic systems [1]

  • The energy levels of the anthracene molecules dispersed in this host material are in close proximity of the bandedge and the defect levels of Zinc oxide (ZnO), which can facilitate efficient resonant energy transfer

  • The resonant energy transfer from the S1 states in anthracene to defect states in ZnO can result in saturation of the trapping sites for the electrons

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Summary

Introduction

Inorganic/organic hybrid materials have the potential of paving the way for developing new photonic systems [1]. Zinc oxide (ZnO) offers an economically viable alternative wide bandgap semiconductor for solid-state lighting with an energy gap of 3.37 eV (at room temperature) It is classified as one of the wide band-gap semiconductor with a large exciton binding energy (60 meV) compared to GaN or the other II–VI group semiconductors. The energy levels of the anthracene molecules dispersed in this host material are in close proximity of the bandedge and the defect levels of ZnO, which can facilitate efficient resonant energy transfer This particular feature motivated the present study of the optical properties of hybrid structures composed of the PPS glass homogenously dispersed with anthracene molecules and its cast on ZnO thin films to realize a stable and robust hybrid semiconductor complex for integrated photonics. The origin of the modification of the emission properties of the hybrid structure has been investigated using temperature dependent and time-dependent PL spectroscopy

Sample preparation and experimental procedure
Results and discussion
Conclusion

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