Energy transfer, conversion and mechanical regulation in graded piezoelectric semiconductor bipolar junction transistor

Abstract

While the effective regulation of carrier redistribution in piezoelectric semiconductor devices by mechanical loads through piezoelectric polarized electric fields is well-studied, there is a scarcity of reported research on the influence of energy transfer and conversion characteristics in a non-thermal equilibrium state of these devices. This paper establishes a nonlinear multi-field coupling model for piezoelectric semiconductor graded bipolar junction transistor (PS-GBJT) and proposes a corresponding multi-gradient iterative algorithm. We regard the product of current and built-in electric field as the work done by electric field force on carriers. By incorporating the energy absorbed/released during carrier recombination/generation process, we observe that non-equilibrium carriers act as a medium that facilitates energy conversion between these two mechanisms. Additionally, the non-uniformly distributed doping extends the influence of space charge region throughout entire transistor. In terms of external input electrical energy, the emitter, base, and collector regions play roles of input energy, transfer energy, and output energy, respectively. The study concludes by demonstrating the regulation of energy transfer or conversion efficiency in emitter, base, and collector regions through mechanical loads, thereby altering the heating behavior of entire GBJT and reshaping its energy transfer path. This leads to the significant finding that distinct energy transfer paths fundamentally define the various operational states of GBJT. The novel insights gained from this research hold reference value for thermal design and energy management of electronic devices.