Abstract

Antiferroelectric films of Sn doped Lead Lanthanum Zirconate-Titanate [(Pb, La)(Sn, Zr, Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , Sn-PLZT] with nano-grains were fabricated by aerosol-deposition (AD). The AD process produced highly dense films without visible pores. The polarization-electric field hysteresis loop and the phase transition behavior of PLZT with Sn doping into the B-sites were characterized. The grain sizes of the AD Sn-PLZT films, which were on the nano-scale, were controlled by the annealing temperature. Regardless of the compositions, the films with the nano-grains by the AD process showed less hysteretic behavior and larger stored energy. The Pb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.97</sub> La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.02</sub> (Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.13</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.02</sub> )O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (PL-0.13) film deposited by AD and annealed at 750 °C for 1 h showed an energy storage capacity and efficiency of 13.0 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> and 78.9 %, respectively.

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