Abstract
La-doped epitaxial BiFeO3 (LBFO) thin films with La doping concentrations of 0, 10, 20, 25, and 30 % were deposited by pulsed laser deposition on Nb-doped single-crystal SrTiO3 substrates. The LBFO thin films doped with a La doping concentration of 10 % showed the best ferroelectric properties due to a large c/a ratio of about 1.04. As the concentration of La increased, the ferroelectric polarizations of the LBFO films decreased while the ferromagnetic properties steadily improved. In particular, the LBFO thin films tended to increase energy storage efficiency as the concentration of La increased, and the LBFO thin films with a La doping concentration of 30 % showed a high energy storage density of about 30.7 J/cm3.
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