Abstract
Specific features of the energy spectrum of a separated type-II heterojunction in an external magnetic field are studied theoretically and experimentally. It is shown that, due to hybridization of the states of the valence band of one semiconductor and the conduction band of the other semiconductor at the heterointerface, there are level anticrossings, which produce quasigaps in the density of states in a nonzero magnetic field. The experimental results of magnetotransport studies for the GaInAsSb/p-InAs quaternary solid solutions with different doping levels are shown to agree well with the results of simulation, and specific features of the energy spectrum of separated type-II heterojunctions are established.
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