Abstract
We present the results of a theoretical study of the variation of the binding energy for shallow donor states in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga 1− x Al x As. The alloy composition, x, is varied between 0.1 and 0.4. In this range, the Ga 1− x Al x As is direct and the single-valley effective mass theory is a valid technique for treating shallow states. Calculations are carried out in the case of finite potential barrier determined by realistic conduction band offsets. We find that the binding energy varies from about 5 meV at infinite GaAs slab thickness to a maximum value between 15 and 5 monolayers depending on the alloy composition. The maximum binding energy varies from about 12 meV for the x = 0.1 alloy to about 16 mcV for the x = 0.4 alloy
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