Abstract
Nanoscale ripples on semiconductor surfaces have potential application in biosensing and optoelectronics, but suffer from uncontrolled surface-amorphization when prepared by conventional ion-irradiation methods. A two-step, energy-separated sequential-irradiation enables simultaneous control of surface-amorphization and ripple-dimensions on Si(100). The evolution of ripples using 100keV Ar+ bombardment and further tuning of the patterns using a sequential-irradiation by 60keV Ar+ at different fluences are demonstrated. The advantage of this approach as opposed to increased fluence at the same energy is clarified by atomic force microscopy and Rutherford backscattering spectroscopy investigations. The explanation of our findings is presented through DAMAGE simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
