Abstract
By means of phonon spectroscopy with superconducting-Al tunnel junctions as tunable phonon generators we show that the threshold energy of the phonon-induced conductivity for Si: B+ and Si: P- agrees well with far-infrared data, proving that the ionization is mainly a one-phonon process. This ionization mechanism allows a sensitive detection of very-high-frequency phonons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.