Abstract
Experimental technique based on microwave noise measurements is used to evaluate energy dissipation by hot electrons in a type II heterostructure consisting of InAs and GaSb with a thin AlSb barrier layer between them and containing a two-dimensional electron gas (2DEG). The energy relaxation time is estimated at 80 K and 300 K lattice temperatures. The energy relaxation time is almost independent of electric field and lattice temperature.
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