Abstract
The energy relaxation rate of hot carriers in a GaAs/(Ga,Al)As quantum well structure is studied for different laser excitation powers in magnetic fields up to 17 T using c.w. photoluminescence spectroscopy. In the regime where LO-phonon scattering dominates the hot carrier cooling a magnetic field reduces the energy relaxation rate. For the lowest excitation power used, an enhancement of the cooling with magnetic field is found due to acoustic phonon scattering. These results are supported by model calculations. Furthermore the results are discussed with respect to previously reported time resolved photoluminescence measurements on GaAs/(Ga,Al)As quantum well structures and bulk GaAs. The present c.w. photoluminescence measurements provide a better quantitative understanding of the time resolved data and the comparison shows that the cooling of hot carriers in 3D and quasi 2D under the application of a magnetic field is not fundamentally different.
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