Abstract
A theoretical discussion is given of the energy loss processes relevant to hopping of localized carriers in amorphous semiconductors in high electric fields. The differences between high field steady and alternating fields are pointed out. The results are applied to the discussion of the experimental results on high field ac conduction in SiO and it is shown that a high effective temperature may be reached in this mode of operation. The concept of effective temperature in high field dc conduction-the Poole-Frenkel process-is also discussed and it is shown that the effective temperature should be a function of lattice temperature only and not of the electric field-in agreement with experimental results.
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