Energy Loss Rates for Light Holes in Ingaas/GaAs Strained-Layer Single Quantum Wells

M C Smith,T J Drummond,T E Zipperian,E D Jones,J E Schirber,I J Fritz

doi:10.1557/proc-102-559

Energy Loss Rates for Light Holes in Ingaas/GaAs Strained-Layer Single Quantum Wells

M C Smith, T J Drummond + Show 4 more

https://doi.org/10.1557/proc-102-559

Copy DOI

Journal: MRS Online Proceedings Library

Publication Date: Jan 1, 1987

Affiliation: Sandia National Laboratories

#Strained-Layer Single Quantum Wells #Strained Layer Quantum Wells + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

ABSTRACTEnergy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For Th < 20K, Shubnikov-de Haas oscillations were used and for Th> 20K, a photoluminescence technique was employed.

Full Text