Energy loss of channeled 290 MeV/u C 6+ ions in a Si crystal

Abstract

We have succeeded in observing the channeling of 290 MeV/u C 6+ ions in a Si crystal. Under 〈1 1 0〉 axial, and (0 0 4), (2 2 0) and (1 1 1) planar channeling conditions, energy loss of the channeled ion in the Si crystal was observed. We also calculated the trajectory dependent stopping power for planar channeling ions, which employs mean and local electron densities evaluated adopting the Molière potential. Calculated energy loss spectra were found to reproduce the experimental results quite well.