Abstract
Color center creation in LiF crystals irradiated with 12C, 14N, 40Ar, 84Kr, and 130Xe MeV ions were studied as a function of the absorbed energy (fluence). For light ions (12C, 14N) the saturation of single F centers takes place at higher absorbed energy (5×1023eV/cm3) than that for 40Ar, 84Kr and 130Xe ions (∼1023eV/cm3). The saturation concentration of F centers for 12C and 14N (2×1019cm−3) is twice of that for the heavier ions. Further irradiation with light ions decreases concentration of F centers, presumably due to aggregation, whereas for heavy ions the saturation concentration remains approximately the same that can be explained by much stronger recombination losses within single tracks.
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