Energy loss and straggling of MeV 4He ions in a Si/Sb multilayer target

Abstract

In a novel approach to energy loss and straggling measurements a multi-σ-layer target of Sb in amorphous Si, grown in a molecular epitaxy facility, has been used for Rutherford backscattering experiments with 4He ions. Within the measured energy range of 0.1–4 MeV our stopping power data differ from the values published by Ziegler by up to −10% around the stopping power maximum at about 0.5 MeV, but tend to merge at lower and higher energies. The precision is 1% or better. The energy straggling shows an energy dependence from about −20% to +15% with respect to the Bohr prediction.