Abstract
We determine energy levels of candidate defects for the high defect density observed just below the SiC conduction band at SiC/SiO2 interfaces. We address C interstitials and H bridge defects which both show defect levels in the upper part of the SiC band gap. However, these defects also give rise to defect levels in the lower part of the band gap, unlike the experimental defect density which lacks this correlation.
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