Abstract
The conversion efficiency of boron (B)-doped Czochralski silicon (Cz-Si) solar cells decreased by light illumination or minority carrier injection. Defects are induced by illumination and they act as trap centers, shorten the minority carrier (electron) lifetime. The energy level of this minority carrier trap center was determined by analyzing the open-circuit voltage ( V OC) changes as a function of substrate temperature. When substrate temperature is low, all electrons which are captured by the trap centers recombine with holes and they do not contribute to the generation of electric power. However, as the substrate temperature is increasing, some of the captured electrons are thermally excited to the conduction band before recombination. Hence, the lifetime of minority carriers are improved and V OC is recovered. Based on this result, the energy level of trap center induced by light illumination is estimated to be 0.26 eV, which corresponds to the boron–oxygen-related defect ( E C-0.26 eV).
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