Abstract
Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.
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