Abstract
Tin‐based perovskites provide environmentally less problematic alternatives to established lead halide‐based absorbers used in today's most efficient perovskite solar cells. However, tin‐based cells still suffer from reduced power conversion efficiency and stability when compared to lead‐based analogues. To facilitate the adoption of the very successful n–i–p cell geometry, efficient contact to hole transport materials (HTMs) is needed that can be deposited on top of the tin‐based perovskite layer, ideally by physical vapor deposition to protect the underlying perovskite. As possible candidates for such HTMs, the growth and the interface formation of 4,4',4''‐tris[phenyl(m‐tolyl)amino]triphenylamine (m‐MTDATA), pentacene, and copper phthalocyanine with formamidinium tin iodide by Kelvin probe force microscopy are systematically studied. For the contact to m‐MTDATA, the formation of a Mott–Schottky junction is revealed, whereas an interfacial dipole is formed for the latter two. Doping densities within the organic semiconductor are determined and indicate ion migration from the perovskite.
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