Abstract
AbstractLocalisation lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm. We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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