Abstract
Thin CuIn x Ga 1 − x Se 2 (0 ≤ x ≤ 1) (CIGS) films were produced by Nd:YAG-laser deposition onto glass substrates. The absorption coefficients and fundamental transition energies of highly oriented CIGS thin films were determined using interferential reflectivity and transmission in the range 400–1700 nm. The energy gaps observed in thin laser-deposited CIGS films near and above the fundamental absorption edge exhibit a nonlinear composition dependence.
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