Abstract
Electron tunneling measurements have been carried out on the orthorhombic Kondo semiconductor CeRhAs using break junction. The measurements reveal the gap size 2Δ (4K)=0.5±0.1eV. This compound exhibits the susceptibility maximum at Tχ=510K, below which the gap is believed to open. The gap ratio 2Δ/kBTχ=12±3 is consistent with that for the isostructural CeNiSn and CeRhSb, thereby indicating the same mechanism of the gap creation among the compounds.
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