Abstract
Electron tunneling measurements have been carried out on the orthorhombic Kondo semiconductor CeRhAs using break junction. The measurements reveal the gap size 2Δ (4K)=0.5±0.1eV. This compound exhibits the susceptibility maximum at Tχ=510K, below which the gap is believed to open. The gap ratio 2Δ/kBTχ=12±3 is consistent with that for the isostructural CeNiSn and CeRhSb, thereby indicating the same mechanism of the gap creation among the compounds.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.