Abstract
In this work, we demonstrate the short-term memory effects of an Ag/SnOx/TiN memristor device using the spontaneous reset process for a neuromorphic system. The thickness and chemical properties of the SnOx layer are investigated via transmission electron microscopy and X-ray photoemission spectroscopy. The non-volatile and volatile memory properties are determined by the forming process, which is verified by the retention test. The conductance change increases as the interval between the pulses decrease because of the reduction of the spontaneous current decay. Moreover, paired-pulse facilitation (PPF) characteristics are demonstrated, where the PFF index decreases with an increase in the pulse interval. We first investigated potentiation with the application of set pulses and depression without reset pulses is examined for the neuromorphic system. With this pulse, we successfully implemented high-performance reservoir computing that has a range from [0000] to [1111] using the short-term memory characteristics of the Ag/SnOx/TiN device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
