Abstract

Skyrmion manipulation utilizing Voltage Control of Magnetic Anisotropy (VCMA) can lead to small footprint nanomagnetic memory devices [1-2]. This talk will focus on using intermediate skyrmion states [3] to enable robust and energy efficient magnetization reversal with VCMA in the presence of thermal noise and defects and its scaling to lateral dimensions below 50 nm. We further discuss experimental demonstration of VCMA induced nonvolatile creation and annihilation of skyrmions in an antiferromagnet/ferromagnet/oxide heterostructure film [4] by applying a few volts. This could provide a pathway to control single skyrmion in an MTJ device using VCMA.

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