Abstract
This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80°C . This 100-μm-long modulator has a 3-dB bandwidth of 30 GHz. Eye diagrams measured at the temperatures of 20°C , 40°C, 60 °C, and 80°C with corresponding adjustment on the input wavelength and the bias voltage show a dynamic extinction ratio of around 5 dB at 40 Gb/s with a 1-V drive voltage swing and an energy consumption of 112 fJ/bit.
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