Abstract

An analysis of the efficiency of power-gating for Clocked Storage Elements (CSEs) is presented. Two CSE topologies: the Transmission Gate Master Slave latch (TGMS) and the Write Port Master Slave latch (WPMS) are examined along with their respective circuits with sleep transistors. In this work, we study the benefits of adding sleep transistors coupled with regular clock-gating during inactive mode. We examine the energy savings for standard clock gated CSEs versus their power gated counterparts. This is done by studying how the leakage energy saved with power gating offsets the energy consumed by the extra transistors added to support it. It is not always beneficial to add sleep transistors when deciding between power-gating or just using clock-gating. We also study how the results and tradeoff change with voltage scaling.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.