Abstract
The energy distributions of interface states were determined in (100)Si/HfO2 using capacitance–voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. Together with independently applied ac conductance spectroscopy they reveal a strong impact of the HfO2 deposition technique on the interface trap density. This includes the enhancement of the Si-dangling bond defect (Pb0 centers) density and a contribution of insulator-related traps in samples deposited using a nitrogen-containing precursor.
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