Year-end Sale % OFF 
Abstract
The energy distributions of interface states were determined in (100)Si/HfO2 using capacitance–voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. Together with independently applied ac conductance spectroscopy they reveal a strong impact of the HfO2 deposition technique on the interface trap density. This includes the enhancement of the Si-dangling bond defect (Pb0 centers) density and a contribution of insulator-related traps in samples deposited using a nitrogen-containing precursor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
