Abstract
In this work, a large area microwave plasma reactor is used, in which a rf-biased substrate is exposed to argon plasma. A directional energy analyser mounted in the substrate holder was used to measure ion energy distribution functions in argon plasma. It was found that a resonance behaviour between ion transit motion and the substrate rf-bias oscillation yielded important enhancement of ion energy when the rf-bias and ion plasma frequencies reached roughly the same values.
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