Abstract

We report on our efforts toward the development of silicon (Si) strip detectors for energy-resolved clinical breast imaging. Typically, x-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a- Se) are used in most commercial systems. Recently, mammography instrumentation has been introduced based on photon counting silicon Si strip detectors. Mammography requires high flux from the x-ray generator, therefore, in order to achieve energy resolved single photon counting, a high output count rate (OCR) for the detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel, provided that the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions. We present our methods and results from the optimization of prototype detectors based on Si strip structures. We describe the detector optimization and the development of ASIC readout electronics that provide the required spatial resolution, low noise, high count rate capabilities and minimal power consumption.

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