Abstract
Wavelength variation of ion beam induced nanoscale ripple structure has received much attention recently due to its possible application in nanotechnology. We present here results of Ar$^+$ bombarded Si in the energy range 50 to 140 keV to demonstrate that with beam scanning the ripple wavelength increases with ion energy and decreases with energy for irradiation without ion beam scanning. An expression for the energy dependence of ripple wavelength is proposed taking into simultaneous effect of thermally activated surface diffusion and ion induced effective surface diffusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
