Abstract
Extended defects formed by antimony ion implantation in Si(100) are investigated as a function of the implant energy. After implantation, spike annealing and furnace annealing are performed to examine the evolution of defects. The amorphization/recrystallization of the implanted layer is examined by transmission electron microscopy (TEM), photothermal characterization, and Raman spectroscopy. Secondary-ion mass spectroscopy is employed to identify the dopant distribution before and after annealing. Cross-sectional TEM reveals that, at a dose of , Sb implantation is sufficient to induce an amorphous-like layer in Si(100). After spike annealing, the amorphous-like layer restores to the crystalline state, but defects are observed when the Sb implantation energy is greater than . For implantation, extended defects appear at the near-surface and the end-of-range (EOR) regions. It is observed that near-surface defects diminish after spike annealing at temperatures higher than , while the EOR defects become coarse at . A comparison between the spike annealing and the furnace annealing for the sheet resistance and the EOR defect is also addressed.
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