Abstract
Forward-angle cross sections and analyzing powers for the main ${1}^{+}$ T=1 and ${1}^{+}$ T=0 states in $^{28}\mathrm{Si}$ have been measured by proton inelastic scattering at 200, 400, and 600 MeV bombarding energy. The results are compared with microscopic distorted-wave impulse approximation (DWIA) calculations. The sensitivity to the optical potentials is pointed out. Two DWIA methods give compatible results for the \ensuremath{\Delta}T=1 transition at 200 and 400 MeV, but differ strongly for the \ensuremath{\Delta}T=0 transition at 200 MeV. For both the \ensuremath{\Delta}T=0 and the \ensuremath{\Delta}T=1 transitions no clear dependence on the incident energy can be ascertained for the ratio of the experimental to the theoretical cross section.
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